Typical Electrical And Thermal Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
2000
I
D
= 8.4A
8
V
DS
= 5V
10V
CAPACITANCE (pF)
15V
1000
C iss
6
500
4
200
C oss
f = 1 MHz
V
GS
= 0V
0.4
1
2
5
10
2
100
C rss
30
0
0
3
6
9
12
15
18
Q
g
, GATE CHARGE (nC)
50
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
80
30
I
D
, DRAIN CURRENT (A)
10
3
1
0.3
0.1
0.03
0.01
0.1
IT
LIM
N)
S(O
RD
50
100
us
1m
s
10m
s
100
ms
1s
10s
DC
POWER (W)
40
SINGLE PULSE
R
θ
JA
=125°C/W
T
A
= 25°C
30
20
V
GS
= 10V
SINGLE PULSE
R
θ
JA
=125°C/W
T
A
= 25°C
0.2
0.5
1
2
10
5
10
20 30
50
0
0.001
0.01
0.1
1
10
100
300
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA(t)
Duty Cycle, D = t
1
/t
2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6612A Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
