Electrical Characteristics
Symbol
I
S
t
RR
Q
RR
V
SD
(continued)
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Type Min
Q2
Q1
Q2
Q2
Q1
Typ
Max Units
3.0
1.3
A
ns
nC
0.7
1.2
V
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 10 A,
d
iF
/d
t
= 300 A/µs
17
12.5
0.5
0.74
(Note 3)
(Note 2)
(Note 2)
Drain-Source Diode Forward V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 1.3 A
Voltage
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6986S Rev C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
