FGA25N120AN
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, I
C
= 3mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
3
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 25mA, V
CE
= V
GE
I
C
= 25A
,
V
GE
= 15V
I
C
= 25A
,
V
GE
= 15V,
T
C
= 125°C
I
C
= 40A
,
V
GE
= 15V
3.5
--
--
--
5.5
2.5
2.9
3.1
7.5
3.2
--
--
V
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2100
180
90
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
60
60
170
45
4.8
1.0
5.7
60
60
180
70
5.5
1.4
6.9
200
15
105
14
--
--
--
90
7.2
1.5
8.7
--
--
--
--
--
--
--
300
23
160
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
V
CC
= 600 V, I
C
= 25A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 600 V, I
C
= 25A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 600 V, I
C
= 25A,
V
GE
= 15V
Measured 5mm from PKG
©2004 Fairchild Semiconductor Corporation
FGA25N120AN Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
