Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
-30
V
Zero Gate Voltage Drain Current
-1
µA
-10
100
-100
µA
nA
nA
TJ =125°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
-0.8
-0.5
-1.7
-1.4
0.45
0.65
0.25
-2.5
-2.2
0.5
0.7
0.3
V
VGS(th)
VDS = VGS, ID = -250 µA
VGS = -4.5 V, ID = -0.9 A
TJ =125°C
TJ =125°C
Static Drain-Source On-Resistance
RDS(ON)
W
VGS = -10 V, ID = -1 A
VGS = -4.5 V, VDS = -5 V
VDS = -5 V, ID = -0.9 A
ID(ON)
gFS
On-State Drain Current
-2
A
S
1.9
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
135
88
pF
pF
pF
Ciss
Coss
Crss
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
40
SWITCHING CHARACTERISTICS (Note 2)
td(on)
tr
td(off)
tf
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Turn - On Delay Time
Turn - On Rise Time
VDD = -6 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 W
5
10
30
70
60
15
ns
ns
ns
ns
ns
ns
17
35
30
8
td(on)
VDD = -10 V, ID = -1 A,
VGS = -10 V, RGEN = 50 W
tr
16
35
30
2
30
90
90
3
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
ns
td(off)
tf
nC
nC
nC
VDS = -10 V, ID = -0.9 A,
VGS = -4.5 V
Qg
Qgs
Qgd
0.5
1
NDS352AP Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
