Typical Electrical Characteristics
1.6
1.4
1.2
1
-5
V
GS
= -10V
V
= -3.5 V
-7.0
GS
-6.0
-5.5
-4.0
-4
-3
-2
-1
0
-5.0
-4.5
-4.5
-5.0
-5.5
-4.0
-6.0
0.8
0.6
0.4
-7.0
-4
-3.5
-4
-10
-3.0
0
-1
-2
-3
-5
0
-1
-2
-3
-5
I
, DRAIN CURRENT (A)
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
1.6
1.4
1.2
1
ID = -0.9A
T = 125°C
J
V GS = -4.5V
25°C
0.8
0.6
0.4
0.2
-55°C
0.8
0.6
V
= -4.5V
GS
-50
-25
0
25
50
75
100
125
150
0
-1
-2
-3
-4
T
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
D
Figure 4. On-Resistance Variation
Figure 3. On-Resistance Variation
with Temperature.
with Drain Current and Temperature.
-4
-3.2
-2.4
-1.6
-0.8
1.2
1.1
1
T
J
= -55°C
VDS = -10V
25
125
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
-1
-2
-3
-4
-5
-6
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
GS
Figure 6. Gate Threshold Variation
Figure 5. Transfer Characteristics.
with Temperature.
NDS352AP Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
