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FDS3672 参数 Datasheet PDF下载

FDS3672图片预览
型号: FDS3672
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的100V , 7.5A , 22mз [N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管PC
文件页数/大小: 11 页 / 260 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS3672
PSPICE模型电气
.SUBCKT FDS3672 2 1 3 ;
钙12 8 6.0E - 10
CB 15 14 7.4e - 10
CIN 6 8 2.0E - 9
DBODY 7 5 DBODYMOD
DBREAK 5月11日DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
Ebreak 11 7 17 18 107
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE 1 9 5.61e - 9
LDRAIN 2 5 1.0E- 9
LSOURCE 3 7 1.98e - 9
RLGATE 1 9 56.1
RLDRAIN 2 5 10
RLSOURCE 3 7 19.8
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
Rdrain 50 16 RdrainMOD 0.4e - 2
RGATE 9 20 1.40
RSLC1 5 51 RSLCMOD 1.0E- 6
RSLC2 5 50 1.0e3
RSOURCE 8 7 RSOURCEMOD 1.3E - 2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50值= { (V ( 5,51 ) / ABS (Ⅴ ( 5,51 ) ))* (PWR (Ⅴ ( 5,51 )/(为1e- 6 * 110 ),3) )}
.MODEL DbodyMOD D( IS = 5.0E - 11 ,N = 1.13 RS = 4.4E - 3 TRS1 = 2.0E - 3 TRS2 = 1.0E - 6
+ CJO = 1.4E - 9 ,M = 0.58 TT = 4.0E - 8 XTI = 4.2 )
.MODEL DbreakMOD D( RS = 0.38 TRS1 = 2.0E - 3 TRS2 = -8.9e - 6 )
.MODEL DplcapMOD D( CJO = 4.9e -10 = 1.0E - 30 ,N = 10 ,M = 0.6 )
.MODEL MstroMOD NMOS ( VTO = 4.05 KP = 90的λ = 0.02 IS = 1E - 30 ,N = 10 TOX = 1 L = 1U W = 1U)
.MODEL MmedMOD NMOS ( VTO = 3.35 KP = 6.0 = 1E - 30 ,N = 10 TOX = 1 L = 1U W = RG 1U = 1.40 )
.MODEL MweakMOD NMOS ( VTO = 2.76 KP = 0.05 IS = 1E - 30 ,N = 10 TOX = 1 L = 1U W = 1U RG = 1.40E + 1 RS = 0.1 )
.MODEL RbreakMOD RES ( TC1 = 8.5e - 4 TC2 = -25.0e - 7 )
.MODEL RdrainMOD RES ( TC1 = 1.5E - 2 TC2 = 5.5E - 5 )
.MODEL RSLCMOD RES ( TC1 = 1.0E - 3 TC2 = 1.0E - 6 )
.MODEL RsourceMOD RES ( TC1 = 4E - 3 TC2 = 1E - 6 )
.MODEL RvthresMOD RES ( TC1 = -3.4e - 3 TC2 = -1.7e - 5 )
.MODEL RvtempMOD RES ( TC1 = -4.4e - 3 TC2 = 2.2E - 6 )
.MODEL S1AMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -4 VOFF = -1.5 )
.MODEL S1BMOD VSWITCH ( RON = 1E - 5 ROFF = 0.1 VON = -1.5 VOFF = -4 )
.MODEL S2AMOD VSWITCH ( RON =为1e- 5 ROFF = 0.1 VON = -1 VOFF = 0.5)
.MODEL S2BMOD VSWITCH ( RON =为1e- 5 ROFF = 0.1 VON = 0.5 VOFF = -1)的
.ENDS
注:对于PSPICE模型的进一步讨论,请参阅
一种新的PSPICE子电路的功率MOSFET拥有全球
温度选项;
IEEE电力电子专家会议记录, 1991年,写的威廉· J·赫普和弗兰克C.
惠特利。
1
RLGATE
CIN
修订版2002年10月
LDRAIN
DPLCAP
10
RSLC1
51
ESLC
50
RDRAIN
EVTHRES
+ 19 -
8
6
MSTRO
LSOURCE
8
RSOURCE
S1A
12
S1B
CA
13
+
EGS
-
6
8
EDS
-
13
8
S2A
14
13
S2B
CB
+
5
8
8
RVTHRES
14
IT
15
17
RBREAK
18
RVTEMP
19
-
VBAT
+
22
7
RLSOURCE
来源
3
21
16
RLDRAIN
DBREAK
11
+
17
EBREAK 18
-
MWEAK
MMED
5
2
RSLC2
5
51
-
ESG
+
LGATE
EVTEMP
RGATE +
18 -
22
9
20
6
8
-
© 2003仙童半导体公司
+
DBODY
FDS3672版本B