TYPICAL CHARACTERISTICS - 900 MHz
50
−15
−17
−19
−21
−23
−25
−27
−29
−31
−33
−35
IRL
46
42
η
D
38
34
V
P
I
= 28 Vdc
= 0.9 W (PEP)
= 14 mA
DS
out
30
26
DQ
Two−Tone Measurement
100 kHz Tone Spacing
22
IM3
18
14
G
ps
10
855 860 865 870 875 880 885 890 895 900 905
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
15
14
13
60
55
50
−25
G
η
D
ps
V
= 28 Vdc
f1 = 880 MHz
DS
−30
−35
I
= 8 mA
f2 = 880.1 MHz
DQ
12
11
45
40
P1dB
10 mA
18 mA
−40
−45
10
9
35
30
16 mA
14 mA
8
7
V
= 28 Vdc
= 14 mA
25
20
DS
−50
−55
I
DQ
f = 880 MHz
Two−Tone Measurement
100 kHz Tone Spacing
12 mA
6
15
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
10
P
, OUTPUT POWER (WATTS)
out
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
−30
−35
−25
V
= 28 Vdc
DS
= 14 mA
f1 = 880 MHz
I
DQ
−30
−35
−40
f2 = 880.1 MHz
−40
−45
3rd Order
−50
−55
V
= 28 Vdc
DS
= 14 mA
f1 = 880 MHz,
10 MHz
I
DQ
5th Order
7th Order
−60
−65
−45
−50
1 MHz
Tone
Spacing = 100 kHz
Two−Tone Measurement
100 kHz Tone Spacing
f2 = f1 + Tone Spacing
Two−Tone Measurement
−70
0.01
0.1
1
10
0.01
0.1
1
10
P
, OUTPUT POWER (WATTS) PEP
out
P
, OUTPUT POWER (WATTS) PEP
out
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
5