TYPICAL CHARACTERISTICS - 2170 MHz
32
27
22
−13
−18
−23
IRL
η
D
V
P
= 28 Vdc
= 0.9 W (PEP)
DD
out
I
= 12 mA
DQ
Two−Tone Measurement,
100 kHz Tone Spacing
IMD
17
12
−28
−33
G
ps
2110
2120
2130
2140
2150
2160
2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
13.8
60
−20
V
= 28 Vdc
DD
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurement
100 kHz Tone Spacing
G
50
40
13.4
13.0
ps
−25
−30
I
= 7.2 mA
DQ
20 mA
30
20
10
0
−35
−40
12.6
12.2
η
D
16 mA
P1dB
V
= 28 Vdc
= 12mA
DD
11.8
11.4
−45
−50
I
DQ
f = 2170 MHz
9.6 mA
12 mA
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.01
0.1
P , OUTPUT POWER (WATTS) PEP
out
1
P
, OUTPUT POWER (WATTS) PEP
out
Figure 18. CW Performance versus Output
Power
Figure 19. Intermodulation Distortion versus
Output Power
−20
−25
−30
−35
−20
V
I
= 28 Vdc
= 12 mA
V
= 28 Vdc, I = 12 mA,
DQ
f1 = 2170 MHz, f2 = 2170.1 MHz
DD
DD
−25
−30
DQ
f1 = 2170 MHz
f2 = f1 + Tone Spacing
Two−Tone Measurement
Two−Tone Measurement, 100 kHz Tone Spacing
−35
−40
−45
−50
3rd Order
1 MHz
10 MHz
5th Order
7th Order
−55
−60
−40
−45
−65
−70
100 kHz
0.01
0.1
1
0.01
0.1
, OUTPUT POWER (WATTS) PEP
1
P
, OUTPUT POWER (WATTS) PEP
out
P
out
Figure 21. Third Order Intermodulation
Distortion versus Output Power
Figure 20. Intermodulation Distortion
Products versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
9
FREESCALE [ Freescale ]
