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MPC8540PX833LB 参数 Datasheet PDF下载

MPC8540PX833LB图片预览
型号: MPC8540PX833LB
PDF下载: 下载PDF文件 查看货源
内容描述: 集成处理器的硬件规格 [Integrated Processor Hardware Specifications]
分类和应用: 外围集成电路时钟
文件页数/大小: 104 页 / 1354 K
品牌: FREESCALE [ Freescale ]
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DDR SDRAM  
Notes  
Table 13. DDR SDRAM DC Electrical Characteristics  
Parameter/Condition  
Symbol  
Min  
Max  
Unit  
MVREF input leakage current  
IVREF  
100  
μA  
Notes:  
1.GVDD is expected to be within 50 mV of the DRAM GVDD at all times.  
2.MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver.  
Peak-to-peak noise on MVREF may not exceed 2% of the DC value.  
3.VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected  
to be equal to MVREF. This rail should track variations in the DC level of MVREF  
.
4.VIH can tolerate an overshoot of 1.2V over GVDD for a pulse width of 3 ns, and the pulse width cannot be greater  
than tMCK. VIL can tolerate an undershoot of 1.2V below GND for a pulse width of 3 ns, and the pulse width  
cannot be greater than tMCK  
.
5.Output leakage is measured with all outputs disabled, 0 V VOUT GVDD  
.
Table 14 provides the DDR capacitance.  
Table 14. DDR SDRAM Capacitance  
Parameter/Condition  
Symbol  
Min  
Max  
Unit  
Notes  
Input/output capacitance: DQ, DQS, MSYNC_IN  
Delta input/output capacitance: DQ, DQS  
Note:  
CIO  
6
8
pF  
pF  
1
1
CDIO  
0.5  
1.This parameter is sampled. GVDD = 2.5 V 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak to peak) = 0.2 V.  
6.2 DDR SDRAM AC Electrical Characteristics  
This section provides the AC electrical characteristics for the DDR SDRAM interface.  
6.2.1 DDR SDRAM Input AC Timing Specifications  
Table 15 provides the input AC timing specifications for the DDR SDRAM interface.  
Table 15. DDR SDRAM Input AC Timing Specifications  
At recommended operating conditions with GVDD of 2.5 V 5%.  
Parameter  
AC input low voltage  
Symbol  
Min  
Max  
Unit  
Notes  
VIL  
VIH  
MVREF – 0.31  
GVDD + 0.3  
V
V
AC input high voltage  
MVREF + 0.31  
MDQS—MDQ/MECC input skew per byte  
tDISKEW  
ps  
1, 2  
-750  
-1125  
750  
1125  
For DDR = 333 MHz  
For DDR 266 MHz  
Note:  
1.Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if  
0 n 7) or ECC (MECC[{0...7}] if n=8).  
2.For timing budget analysis, the MPC8540 consumes ±550 ps of the total budget.  
MPC8540 Integrated Processor Hardware Specifications, Rev. 4  
Freescale Semiconductor  
17