TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
0
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
0
ACPR (dBc), ALT1 (dBc)
−5
−10
−15
−20
675 mA
450 mA
550 mA
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
21
20
G
ps
, POWER GAIN (dB)
19
18
IRL
17
16
15
14
820
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
ACPR
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 14 W (Avg.)
I
DQ
= 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
40
30
20
−30
−40
−50
−60
−70
980
ALT1
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 14 Watts Avg.
20
η
D
19
G
ps
, POWER GAIN (dB)
18
17
IRL
16
15
14
ALT1
13
820
840
860
880
900
920
940
960
f, FREQUENCY (MHz)
−60
980
ACPR
V
DD
= 28 Vdc, P
out
= 28 W (Avg.)
I
DQ
= 450 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
G
ps
50
40
−20
−30
−40
−50
60
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 28 Watts Avg.
21
550 mA
20
G
ps
, POWER GAIN (dB)
450 mA
19
350 mA
225 mA
I
DQ
= 675 mA
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
I
DQ
= 225 mA
−40
350 mA
−50
18
17
V
DD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
16
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9060NR1
6
RF Device Data
Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
