1MBI1600U4C-170
IGBT MODULE (U series)
1700V / 1600A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Ic pulse
Conditions
Maximum ratings
1700
±20
2400
1600
4800
3200
1600
3200
9760
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting (*2)
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 1600mA
V
GE
= 15V
I
C
= 1600A
V
GE
Characteristics
min.
typ.
max.
-
-
1.0
-
-
3200
5.5
6.5
7.5
-
2.47
2.65
-
2.87
-
-
2.25
2.40
-
2.65
-
-
150
-
-
1.80
-
-
0.85
-
-
1.30
-
-
0.35
-
-
2.02
2.40
-
2.22
-
-
1.80
2.15
-
2.00
-
-
0.35
-
-
0.134
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
= 0V, V
CE
= 10V, f = 1MHz
V
CC
= 900V, I
C
= 1600A
V
GE
= ±15V, Tj = 125°C
R
gon
= 2.7Ω, R
goff
= 1Ω
V
GE
= 0V
I
F
= 1600A
I
F
= 1600A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.013
-
-
0.023
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
FUJI [ FUJI ELECTRIC ]
