1MBI1600U4C-170
IGBT Modules
3600
3200
Forward current : IF [ A ]
2800
2400
2000
1600
1200
800
400
Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery current : Irr [ A ]
Tj=25°C
Tj=125°C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Vcc=900V, VGE=±15V, Rgon=2.7Ω, Tj=125°C
Irr
Reverse recovery characteristics (typ.)
2.0
1.8
Reverse recovery time : trr [us]
1.6
1.4
1.2
1.0
0.8
trr
0.6
0.4
0.2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
400
800
0.0
1200 1600 2000 2400 2800
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
0.1000
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
FWD
0.0100
IGBT
0.0010
0.0001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
FUJI [ FUJI ELECTRIC ]
