Switching time vs. R
G
V
CC
=600V, I
C
=200A, V
GE
=±15V, T
j
=25°C
1000
t
off
t
on
1000
t
r
t
f
Dynamic input characteristics
T
j
=25°C
25
V
CC
=400V
600V
800
800V
20
, t
r
, t
off
, t
f
[nsec]
Collector-Emitter voltage : V
CE
[V]
600
15
Switching time : t
on
400
10
200
100
5
0
10
Gate resistance : R
G
[
Ω
]
0
500
1000
1500
2000
Gate charge : Q
G
[nC]
0
2500
Forward current vs. Forward voltage
V
GE
= O V
500
T
j
=125°C
400
25°C
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
rr
[nsec]
F
[A]
Reverse recovery current : I
rr
[A]
t
rr
125°C
Forward current : I
300
I
rr
125°C
t
rr
25°C
I
rr
25°C
100
200
100
0
0
1
2
3
4
5
0
100
200
Forward current : I
F
[A]
300
400
Forward voltage : V
F
[V]
Reverse recovery time
:t
Reversed biased safe operating area
Transient thermal resistance
2000
Diode
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>4.7
Ω
[°C/W]
1600
C
th(j-c)
[A]
0,1
IGBT
Collector current : I
1200
SCSOA
(non-repetitive pulse)
Thermal resistance : R
0,01
800
400
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
1
0
200
400
600
800
1000
1200
Pulse width : PW [sec]
Collector-Emitter voltage : V
CE
[V]
FUJI [ FUJI ELECTRIC ]
