1MBI2400U4D-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C ,chip
VGE=20 15V 12V
IGBT Modules
5500
5000
4500
5500
5000
4500
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
VGE=20V 15V
12V
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
8V
10V
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
8V
10V
5500
5000
4500
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
Collector - Emitter voltage : VCE [ V ]
Tj=25°C
Tj=125°C
10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
8
Collector current : Ic [A]
4000
3500
3000
2500
2000
1500
1000
500
0
0
1
2
3
4
5
6
4
Ic=4800A
Ic=2400A
Ic=1200A
2
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
1000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
1000
800
600
400
200
0
Dynamic Gate charge (typ.)
Tj= 25°C
VCE
VGE
25
Capacitance : Cies, Coes, Cres [ nF ]
100
15
10
5
0
10000
Cres
10
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
0
2000
4000
6000
8000
Gate charge : Qg [ nC ]
2
Gate-Emitter voltage : VGE [V]
Cies
20
FUJI [ FUJI ELECTRIC ]
