1MBI2400U4D-170
IGBT Modules
5500
5000
4500
Forward current vs. Forward on voltage (typ.)
chip
Tj=25°C
Tj=125°C
3200
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Tj=125°C
Irr
Reverse recovery characteristics (typ.)
1.6
1.4
1.2
1.0
0.8
Reverse recovery current : Irr [ A ]
2800
2400
2000
1600
1200
800
400
0
0
Forward current : IF [ A ]
4000
3500
3000
2500
2000
1500
1000
500
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward on voltage : VF [ V ]
trr
0.6
0.4
0.2
0.0
500 1000 1500 2000 2500 3000 3500 4000
0.1000
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
0.0100
IGBT
0.0010
0.0001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
Reverse recovery time : trr [us]
Forward current : IF [ A ]
FUJI [ FUJI ELECTRIC ]
