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2MBI100N-120 参数 Datasheet PDF下载

2MBI100N-120图片预览
型号: 2MBI100N-120
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块( N系列) [IGBT MODULE ( N series )]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 4 页 / 146 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2MBI100N-120的Datasheet PDF文件第1页浏览型号2MBI100N-120的Datasheet PDF文件第3页浏览型号2MBI100N-120的Datasheet PDF文件第4页  
Collector current vs. Collector-Emitter voltage
T
j
=25°C
250
V
GE
=20V,15V,12V,10V
200
200
250
Collector current vs. Collector-Emitter voltage
T
j
=125°C
V
GE
=20V,15V,12V,10V
[A]
C
C
[A]
Collector current : I
150
150
100
100
8V
50
8V
50
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25°C
10
10
Collector current : I
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125°C
[V]
CE
Collector-Emitter voltage :V
6
Collector-Emitter voltage V
CE
8
[V]
8
6
4
I
C
=
200A
100A
4
I
C
=
200A
100A
50A
2
50A
2
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
0
0
5
10
15
20
25
Gate-Emitter voltage : V
GE
[V]
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
, V
GE
±15V, T
j
=25°C
1000
t
OFF
t
ON
1000
Switching time vs. Collector current
V
CC
=600V, R
G
=9.1
, V
GE
=±15V, T
j
=125°C
t
OFF
t
ON
t
f
t
r
[nsec]
ON
, t
r
, t
OFF
, t
f
100
ON
, t
r
, t
OFF
, t
f
[nsec]
100
t
f
t
r
Switching time : t
10
0
50
100
150
200
Collector current : I
C
[A]
Switching time : t
10
0
50
100
150
200
Collector current : I
C
[A]