Switching Time vs. R
G
V
CC
=600V, I
C
=100A, V
GE
=±15V, T
j
=25°C
t
OFF
1000
Dynamic Input Characteristics
T
j
=25°C
25
[ns]
[V]
V
CC
=400V
800
600V
20
t
ON
1000
ON
, t
r
, t
OFF
, t
f
CE
Collector-Emitter Voltage : V
600
15
t
r
t
f
400
10
200
100
5
0
10
Gate Resistance : R
G
[
Ω
]
0
400
800
1200
Gate Charge : Q
G
[nC]
0
Forward Current vs. Forward Voltage
V
GE
=0V
250
Reverse Recovery Characteristics
t
rr
, I
rr
vs. I
F
t
rr
[A]
[A]
rr
rr
200
T
j
=125°C
25°C
[ns]
125°C
t
rr
25°C
100
I
rr
125°C
I
rr
25°C
Reverse Recovery Current : I
F
100
50
Reverse Recovery Time
150
Forward Current : I
:t
0
0
1
2
3
4
5
Forward Voltage : V
F
[V]
10
0
50
100
150
200
Forward Current : I
F
[A]
Reversed Biased Safe Operating Area
Transient Thermal Resistance
1
Diode
1000
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>9.1
Ω
[°C/W]
[A]
800
IGBT
0,1
th(j-c)
Collector Current : I
C
600
SCSOA
(non-repetitive pulse)
Thermal resistance : R
400
0,01
200
RBSOA (Repetitive pulse)
0,001
0,001
0
0,01
0,1
1
0
200
400
600
800
1000
1200
Pulse Width : PW [s]
Collector-Emitter Voltage : V
CE
[V]
Gate-Emitter Voltage : V
Switching Time : t
GE
[V]
800V
FUJI [ FUJI ELECTRIC ]
