欢迎访问ic37.com |
会员登录 免费注册
发布采购

2MBI200U4H-170 参数 Datasheet PDF下载

2MBI200U4H-170图片预览
型号: 2MBI200U4H-170
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT MODULE]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 13 页 / 434 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号2MBI200U4H-170的Datasheet PDF文件第5页浏览型号2MBI200U4H-170的Datasheet PDF文件第6页浏览型号2MBI200U4H-170的Datasheet PDF文件第7页浏览型号2MBI200U4H-170的Datasheet PDF文件第8页浏览型号2MBI200U4H-170的Datasheet PDF文件第9页浏览型号2MBI200U4H-170的Datasheet PDF文件第11页浏览型号2MBI200U4H-170的Datasheet PDF文件第12页浏览型号2MBI200U4H-170的Datasheet PDF文件第13页  
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj= 25°C
10000
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω, Tj=125°C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
ton
toff
tr
tf
1000
toff
ton
tr
100
100
tf
10
0
100
200
300
400
Collector current : Ic [A]
10
0
100
200
300
400
Collector current : Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=200A, VGE=±15V, Tj= 25°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
10000
100
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=2.2Ω
Eoff(125°C)
75
Eon(125°C)
Err(125°C)
Eoff(25°C)
Err(25°C)
Eon(25°C)
Switching time : ton, tr, toff, tf [ nsec ]
1000
ton
toff
tr
50
100
tf
25
10
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
0
0
100
200
300
400
Collector current : Ic [A]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=200A, VGE=±15V, Tj= 125°C
200
Eon
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C
600
500
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [A]
150
400
300
200
100
0
100
Eoff
50
Err
0
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
MS5F6136
10
13
H04-004-03a