N-channel MOS-FET
800V
2Ω
2SK2765-01
FAP-IIS Series
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=3,5A; V
GS
=10V
7A
125W
> Characteristics
Typical Output Characteristics
I
D
=f(V
DS
); 80µs pulse test; T
C
=25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80µs pulse test;V
DS
=25V; T
ch
=25°C
↑
I
D
[A]
↑
R
DS(ON)
[Ω]
↑
2
I
D
[A]
1
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80µs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80µs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
DS(ON)
[Ω]
↑
g
fs
[S]
↑
5
V
GS(th)
[V]
4
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=80V; I
AV
=7A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80µs pulse test; V
GS
=0V
↑
C [F]
↑
7
Eas [mJ]
↑
8
I
F
[A]
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe operation area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
th(ch-c)
[K/W]
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
[W]
10
↑
I
D
[A]
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
FUJI [ FUJI ELECTRIC ]
