6MBP200RA060
Electrical characteristics of control circuit(at
Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Power supply current of P-line side Pre-driver(one unit) I
ccp
I
CCN
Power supply current of N-line side three Pre-driver
V
in(th)
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*
7
Switching frequency of IPM
V
Z
T
COH
T
CH
T
jOH
T
jH
I
OC
t
DOC
V
UV
V
H
t
ALM
t
SC
R
ALM
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Min.
6
18
1.00
1.70
-
110
-
150
-
300
-
11.0
0.2
1.5
Tj=25°C Fig.3
-
1425
Typ.
-
-
IGBT-IPM
Max.
32
1.35
2.05
8.0
-
20
-
20
-
10
-
-
2
-
1500
96
1.70 V
2.40 V
V
-
125
-
-
-
-
-
12.5
-
-
12
1575
Unit
mA
mA
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at
Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Switching time (FWD)
Symbol Condition
ton
toff
trr
IC=200A, VDC=300V
IF=200A, VDC=300V
Min.
0.3
-
-
Typ.
-
-
-
Max.
-
3.6
0.4
Unit
µs
µs
µs
Thermal characteristics(
Tc=25°C)
Item
Junction to Case thermal resistance
Case to fin thermal resistance with compound
INV
IGBT
FWD
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
-
-
0.05
Max.
0.17
0.36
-
Unit
°C/W
°C/W
°C/W
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
V
DC
V
CC
f
SW
-
-
Min.
200
13.5
1
2.5
2.5
Typ.
-
15
-
-
-
Max.
400
16.5
20
3.0
3.0
Unit
V
V
V
N·m
N·m
FUJI [ FUJI ELECTRIC ]
