6MBP200RA060
IGBT-IPM
Transient thermal resistance
1
Thermal resistance : Rth(j-c) (°C/W)
2000
1800
Collector current : Ic (A)
FWD
IGBT
0.1
1600
1400
1200
1000
800
600
400
200
0.01
0.001
0.01
0.1
1
Pulse width :Pw (sec)
0
0
Reversed biased safe operating area
Vcc=15V,Tj
<
125°C
=
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pulse)
100
200
300
400
500
600
700
Collector-Emitter voltage : Vce (V)
Power derating for IGBT
(per device)
800
Collecter Power Dissipation : Pc (W)
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Case Temperature : Tc (°C)
Collecter Power Dissipation : Pc (W)
350
300
250
200
150
100
50
0
0
20
P o w e r d e ra tin g for F W D
(pe r d ev ic e )
40
60
80
100
120
140
160
Case Temperature : Tc (°C)
Switching loss : Eon,Eoff,Err (mJ/cycle)
Switching loss : Eon,Eoff,Err (mJ/cycle)
15
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=25°C
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=125°C
15
Eon
10
10
Eon
5
Eoff
Err
0
0
50
100
150
200
Collector current : Ic (A)
Eoff
5
Err
0
0
50
100
150
Collector current : Ic (A)
200
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