7MBR100SD060
IGBT Module
Characteristics (Representative)
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
Tj= 25°C(typ.)
250
250
200
150
100
50
VGE= 20V
12V
15V
15V
VGE= 20V
12V
200
150
100
50
10V
10V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
10
250
200
150
100
50
Tj= 125°C
Tj= 25°C
8
6
4
2
0
Ic=200A
Ic=100A
Ic= 50A
0
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
50000
500
400
300
200
100
0
25
20
15
10
5
10000
5000
Cies
1000
500
Coes
Cres
0
0
5
10
15
20
25
30
35
0
100
200
300
400
500
600
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
FUJI [ FUJI ELECTRIC ]
