7MBR100SD060
IGBT Module
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
15V
VGE= 20V 15V
VGE= 20V
12V
12V
10V
10V
0
1
2
3
4
5
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
120
100
80
60
40
20
0
10
8
Tj= 25°C
Tj= 125°C
6
4
Ic=100A
2
Ic= 50A
Ic= 25A
0
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
20000
10000
500
400
300
200
100
0
25
20
15
10
5
Cies
1000
Coes
Cres
100
0
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]