7MBR50SB140
IGBT Module
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Characteristics
Typ.
Unit
Min.
Max.
1.0
mA
µA
V
ICES
Zero gate voltage collector current
Gate-Emitter leakage current
VCE=1400V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A chip
IGES
0.2
8.5
5.5
7.2
VGE(th)
VCE(sat)
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
2.2
2.4
V
terminal
2.8
6000
pF
µs
Cies
ton
tr
Input capacitance
Turn-on time
VGE=0V, VCE=10V, f=1MHz
VCC=800V
0.35
0.25
0.1
1.2
0.6
IC=50A
tr(i)
toff
tf
VGE=±15V
0.45
0.08
2.4
Turn-off
RG=24Ω
1.0
0.3
V
VF
Forward on voltage
IF=50A
chip
2.6
terminal
3.4
0.35
1.0
µs
mA
µA
V
trr
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
IF=50A
ICES
IGES
VCE(sat)
VCES=1400V, VGE=0V
VCE=0V, VGE=±20V
0.2
2.2
Collector-Emitter saturation voltage
IC=25A, VGE=15V chip
2.35
0.35
0.25
0.45
0.08
terminal
2.8
1.2
0.6
1.0
0.3
1.0
µs
ton
tr
Turn-on time
Turn-off time
VCC=800V
IC=25A
toff
tf
VGE=±15V
RG=51Ω
mA
V
IRRM
VFM
Reverse current
VR=1400V
IF=50A
1.1
1.2
Forward on voltage
chip
terminal
1.5
1.0
mA
IRRM
Reverse current
Resistance
VR=1600V
T=25°C
5000
Ω
R
465
495
520
T=100°C
T=25/50°C
3305
3375
3450
K
B
B value
Thermal resistance Characteristics
Item
Symbol
Condition
Characteristics
Typ.
Unit
Min.
Max.
Inverter IGBT
Inverter FWD
Brake IGBT
0.35
0.75
Thermal resistance ( 1 device )
Rth(j-c)
Rth(c-f)
0.69 °C/W
0.50
Converter Diode
With thermal compound
Contact thermal resistance
*
0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Brake]
[Inverter]
[Converter]
21(P)
22(P1)
20(Gu)
19(Eu)
18(Gv)
17(Ev)
16(Gw)
1(R)
2(S)
3(T)
15(Ew)
7(B)
4(U)
5(V)
6(W)
14(Gb)
13(Gx)
12(Gy)
11(Gz)
10(En)
23(N)
24(N1)
FUJI [ FUJI ELECTRIC ]
