IGBT Module
7MBR50SB140
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
60
60
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
50
15V
VGE= 20V
12V
50
VGE= 20V
15V
12V
Collector current : Ic [ A ]
40
10V
30
Collector current : Ic [ A ]
40
10V
30
20
20
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
10
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
60
10
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Tj= 25°C
50
Tj= 125°C
40
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
30
4
Ic= 50A
2
Ic= 25A
Ic= 12.5A
20
10
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=25A, Tj= 25°C
25
Capacitance : Cies, Coes, Cres [ pF ]
Cies
Collector - Emitter voltage : VCE [ V ]
800
20
600
15
1000
400
10
Coes
200
5
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
0
0
50
100
150
200
Gate charge : Qg [ nC ]
0
250
FUJI [ FUJI ELECTRIC ]
