FLC167WF
C-Band Power GaAs FET
POWER DERATING CURVE
10
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
Total Power Dissipation (W)
Drain Current (mA)
8
6
4
2
600
VGS =0V
-0.5V
400
-1.0V
200
-1.5V
-2.0V
0
50 100 150 200
0
2
4
6
8
10
Case Temperature (°C)
OUTPUT POWER
& IM3 vs. INPUT POWER
Drain-Source Voltage (V)
Output Power (S.C.L.) (dBm)
27
25
23
21
19
17
VDS=10V
f1 = 6.0 GHz
f2 = 6.01GHz
2-tone Test
Pout
IM3
-10
IM3 (dBc)
-20
-30
-40
-50
10 12 14 16 18
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
32
IDS
≈
0.6 IDSS
P1dB &
η
add vs. VDS
f=6GHz
IDS
≈
0.6 IDSS
Output Power (dBm)
P1dB (dBm)
30
28
26
24
22
20
4 GHz
Pout
6 GHz
32
P1dB
50
40
η
add
η
add (%)
4 GHz
6 GHz
50
40
30
20
10
31
30
η
add
30
14 16 18 20 22 24
Input Power (dBm)
8
9
10
Drain-Source Voltage (V)
2
η
add (%)
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