FLC167WF
C-Band Power GaAs FET
Case Style "WF"
Metal-Ceramic Hermetic Package
Ø1.6±0.01
(0.063)
2.5
(0.098)
1
2
3
2.5±0.15
(0.098)
1.0 Min.
(0.039)
0.1±0.05
(0.004)
1.0 Min.
(0.039)
2.5 Max.
(0.098)
0.6
(0.024)
8.5±0.2
(0.335)
6.1±0.1
(0.240)
0.8±0.1
(0.031)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
