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GS71024GT-10 参数 Datasheet PDF下载

GS71024GT-10图片预览
型号: GS71024GT-10
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×24的1.5Mb异步SRAM [64K x 24 1.5Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 279 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71024T/U
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
Ai
Minimum
3.0
3.135
2.0
–0.3
0
–40
Typical
3.3
3.3
Maximum
3.6
3.6
V
DD
+ 0.3
0.8
70
85
Unit
V
V
V
V
o
C
o
C
Notes:
1. Input overshoot voltage should be less than V
DD
+ 2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Maximum
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
OL
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z, V
OUT
= 0
to V
DD
I
OH
= –4mA
I
OL
= +4mA
Minimum
–1uA
–1uA
2.4
Maximum
1uA
1uA
0.4 V
Rev: 1.05 11/2004
4/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.