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GS72116AJ-10I 参数 Datasheet PDF下载

GS72116AJ-10I图片预览
型号: GS72116AJ-10I
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16的2Mb SRAM的异步 [128K x 16 2Mb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 18 页 / 491 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72116ATP/J/T/U
Read Cycle 2: WE = V
IH
tRC
Address
tAA
CE
tAC
tLZ
UB, LB
OE
tBLZ
tOE
Data Out
tOLZ
High impedance
tAB
tBHZ
tOHZ
Data valid
tHZ
Write Cycle
Parameter
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Data set up time
Data hold time
Write pulse width
Address set up time
Write recovery time (WE)
Write recovery time (CE)
Output Low Z from end of write
Write to output in High Z
Symbol
tWC
tAW
tCW
tBW
tDW
tDH
tWP
tAS
tWR
tWR1
tWLZ
*
tWHZ
*
-7
Min
7
5
5
5
3.5
0
5
0
0
0
3
Max
3
Min
8
5.5
5.5
5.5
4
0
5.5
0
0
0
3
-8
Max
3.5
Min
10
7
7
7
5
0
7
0
0
0
3
-10
Max
4
Min
12
8
8
8
6
0
8
0
0
0
3
-12
Max
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* These parameters are sampled and are not 100% tested.
Rev: 1.04a 10/2002
8/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.