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GS72116AJ-7 参数 Datasheet PDF下载

GS72116AJ-7图片预览
型号: GS72116AJ-7
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16的2Mb SRAM的异步 [128K x 16 2Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 491 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72116ATP/J/T/U
Recommended Operating Conditions
Parameter
Supply Voltage for -7/-8/-10/12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
2.0
–0.3
0
–40
Typ
3.3
Max
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
o
C
o
C
Note:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than
–2
V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
LO
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
=
–4mA
I
LO
= +4mA
Min
1 uA
–1
uA
2.4
Max
1 uA
1 uA
0.4 V
Rev: 1.04a 10/2002
5/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.