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GS72116ATP-12 参数 Datasheet PDF下载

GS72116ATP-12图片预览
型号: GS72116ATP-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16的2Mb SRAM的异步 [128K x 16 2Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 491 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72116ATP/J/T/U
Truth Table
CE
H
OE
X
WE
X
LB
X
L
UB
X
L
H
L
L
H
L
X
H
DQ
1
to DQ
8
Not Selected
Read
Read
High Z
Write
Write
Not Write, High Z
High Z
High Z
DQ
9
to DQ
16
Not Selected
Read
High Z
Read
Write
Not Write, High Z
Write
High Z
High Z
V
DD
Current
ISB
1
, ISB
2
L
L
H
L
H
L
L
X
L
L
H
I
DD
L
L
H
X
H
X
X
H
Note: X: “H” or “L”
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5
to +4.6
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
0.7
–55
to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.04a 10/2002
4/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.