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GS72116ATP-12 参数 Datasheet PDF下载

GS72116ATP-12图片预览
型号: GS72116ATP-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16的2Mb SRAM的异步 [128K x 16 2Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 491 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS72116ATP/J/T/U
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
VIL
All other inputs
VIH or
VIL
Min. cycle time
IOUT = 0 mA
CE
VIH
All other inputs
VIH or
≤VIL
Min. cycle time
CE
V
DD
0.2 V
All other inputs
V
DD
0.2 V or
0.2 V
0 to 70°C
7 ns
8 ns
10 ns
12 ns
7 ns
–40
to 85°C
8 ns
10 ns
12 ns
Operating
Supply
Current
IDD (max)
145 mA
125 mA
100 mA
85 mA
150 mA
130 mA
105 mA
90 mA
Standby
Current
ISB1
(max)
25 mA
20 mA
20 mA
15 mA
30 mA
25 mA
25 mA
20 mA
Standby
Current
ISB2
(max)
5 mA
10 mA
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Rev: 1.04a 10/2002
6/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.