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GS74108AJ-8 参数 Datasheet PDF下载

GS74108AJ-8图片预览
型号: GS74108AJ-8
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 4Mb的异步SRAM [512K x 8 4Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 647 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74108ATP/J/X
Truth Table
CE
H
L
L
L
Note:
X: “H” or “L”
OE
X
L
X
H
WE
X
H
L
H
DQ
1
to DQ
8
Not Selected
Read
Write
High Z
V
DD
Current
ISB
1
, ISB
2
I
DD
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5 to +4.6
–0.5 to V
DD
+0.5
(≤ 4.6 V max.)
–0.5 to V
DD
+0.5
(≤ 4.6 V max.)
0.7
–55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -8/-10/-12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
2.0
–0.3
0
–40
Typ
3.3
Max
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
o
C
C
o
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2006
3/13
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.