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GS74116J-12I 参数 Datasheet PDF下载

GS74116J-12I图片预览
型号: GS74116J-12I
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16的4Mb SRAM的异步 [256K x 16 4Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 134 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74116TP/J/U
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
3.135
2.0
-0.3
0
-40
Typ
3.3
3.3
-
-
-
-
Max
3.6
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
V
o
C
C
o
Note:
1. Input overshoot voltage should be less than V
DD
+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
=0V
V
OUT
=0V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
LO
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
= - 4mA
I
LO
= + 4mA
Min
-1uA
-1uA
2.4
Max
1uA
1uA
0.4V
Rev: 2.02 3/2000
4/14
© 1999, Giga Semiconductor, Inc.
N
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.