GS81032AT/Q-150/138/133/117/100/66
Undershoot Measurement and Timing
V
IH
V
DD
+ -2.0 V
V
SS
50%
V
SS
– 2.0 V
20% tKC
V
IL
50%
V
DD
Overshoot Measurement and Timing
20% tKC
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Parameter
Control Input Capacitance
Input Capacitance
Output Capacitance
Note: This parameter is sample tested.
Symbol
C
I
C
IN
C
OUT
Test conditions
V
DD
= 3.3 V
V
IN
= 0 V
V
OUT
= 0V
Typ.
3
4
6
Max.
4
5
7
Unit
pF
pF
pF
Package Thermal Characteristics
Rating
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Layer Board
single
four
Symbol
R
ΘJA
R
ΘJA
TQFP Max
40
24
QFP Max
TBD
TBD
Unit
°C/W
°C/W
Notes
1,2,4
1,2,4
R
ΘJC
Junction to Case (TOP)
9
TBD
°C/W
3,4
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Rev: 1.01 7/2001
10/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GSI [ GSI TECHNOLOGY ]
