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GS8161FZ18BD 参数 Datasheet PDF下载

GS8161FZ18BD图片预览
型号: GS8161FZ18BD
PDF下载: 下载PDF文件 查看货源
内容描述: 18MB流量通过同步NBT SRAM [18Mb Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 28 页 / 1238 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS8161FZ18/32/36BD
Functional Details
Clocking
Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to
suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation.
Flow Through Mode Read and Write Operations
Flow Through NBT SRAMs are equipped with rising-edge-triggered input registers that capture data-in, address, and control input
signals, but do not have a data output register like the one found on pipelined NBT SRAMs. Once a read command and an
associated read address is clocked into the RAM, the read operation proceeds and, if the Output Enable pin is driven active low,
culminates with the read data appearing on the RAM output pins, even if no additional clocks are sent to the RAM.
A write operation in a Flow Through NBT SRAM begins when a write command and write address are clocked into the RAM.
Next, data-in for that write address must be applied to the input pins and held for capture by the very next rising edge of clock. A
write protocol like the one used on Flow Through NBT SRAMs—the capture of the write address and write command on one clock
and the capture of the write data-in on the next clock—is often described as a Late Write protocol.
It is the combination of the Flow Through read protocol and the Late Write write protocol that allows the Flow Through NBT
SRAM to achieve seamless back-to-back, read-write-read transitions on a bi-directional data bus without requiring the user to
insert dead cycles to prevent bus contention during the transition from read to write or write to read.
Rev: 1.00 6/2006
7/28
© 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.