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GS88036AT-200 参数 Datasheet PDF下载

GS88036AT-200图片预览
型号: GS88036AT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×18 , 256K ×32 , 256K ×36 9MB同步突发静态存储器 [512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs]
分类和应用: 存储静态存储器
文件页数/大小: 26 页 / 734 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS88018/32/36AT-250/225/200/166/150/133
Mode Pin Functions
Mode Name
Burst Order Control
Power Down Control
Pin
Name
LBO
ZZ
State
L
H
L or NC
H
Function
Linear Burst
Interleaved Burst
Active
Standby, I
DD
= I
SB
Note:
There pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will operate
in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
I
nterleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
01
10
11
00
10
11
00
01
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Byte Write Truth Table
Function
Read
Read
Write byte a
Write byte b
Write byte c
Write byte d
Write all bytes
Write all bytes
GW
H
H
H
H
H
H
H
L
BW
H
L
L
L
L
L
L
X
B
A
X
H
L
H
H
H
L
X
B
B
X
H
H
L
H
H
L
X
B
C
X
H
H
H
L
H
L
X
B
D
X
H
H
H
H
L
L
X
Notes
1
1
2, 3
2, 3
2, 3, 4
2, 3, 4
2, 3, 4
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Rev: 1.02 9/2002
7/26
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.