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GS88237BB-250I 参数 Datasheet PDF下载

GS88237BB-250I图片预览
型号: GS88237BB-250I
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×36 9MB SCD / DCD同步突发SRAM [256K x 36 9Mb SCD/DCD Sync Burst SRAM]
分类和应用: 静态存储器
文件页数/大小: 29 页 / 762 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS88237BB/D-333/300/250/200
Mode Pin Functions
Mode Name
Burst Order Control
Power Down Control
Single/Dual Cycle Deselect Control
FLXDrive Output Impedance Control
9th Bit Enable
Pin Name
LBO
ZZ
SCD
ZQ
PE
State
L
H
L or NC
H
L
H or NC
L
H or NC
L
H or NC
Function
Linear Burst
Interleaved Burst
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Activate DQPx I/Os (x18/x36 mode)
Deactivate DQPx I/Os (x16/x32 mode)
Note:
There are pull-up devices onthe ZQ, SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
2nd address
3rd address
4th address
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.04 3/2005
6/29
© 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.