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GS882ZV36BB-300I 参数 Datasheet PDF下载

GS882ZV36BB-300I图片预览
型号: GS882ZV36BB-300I
PDF下载: 下载PDF文件 查看货源
内容描述: 9MB流水线和流量通过同步NBT SRAM [9Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 33 页 / 885 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS882ZV18/36BB/D-333/300/250/200  
Pipelined and Flow Through Read Write Control State Diagram  
D
B
Deselect  
R
D
D
W
New Read  
New Write  
R
R
W
B
B
R
W
W
R
Burst Read  
Burst Write  
B
B
D
D
Key  
Notes  
Input Command Code  
1. The Hold command (CKE Low) is not  
shown because it prevents any state change.  
ƒ
Transition  
2. W, R, B, and D represent input command  
codes as indicated in the Synchronous Truth Table.  
Current State (n)  
Next State (n+1)  
n
n+1  
n+2  
n+3  
Clock (CK)  
Command  
ƒ
ƒ
ƒ
ƒ
Current State  
Next State  
Current State and Next State Definition for Pipelined and Flow through Read/Write Control State Diagram  
Rev: 1.03 3/2005  
9/33  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.