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GS882ZV36BB-300I 参数 Datasheet PDF下载

GS882ZV36BB-300I图片预览
型号: GS882ZV36BB-300I
PDF下载: 下载PDF文件 查看货源
内容描述: 9MB流水线和流量通过同步NBT SRAM [9Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 33 页 / 885 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS882ZV18/36BB/D-333/300/250/200
GS882ZV18/36B BGA Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
NC
CK
CKE
W
E
1
E
3
E
2
G
ADV
ZZ
FT
LBO
PE
ZQ
TMS
TDI
TDO
TCK
MCH
DNU
V
DD
V
SS
V
DDQ
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
No Connect
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
9th Bit Enable; active low (119-bump BGA only)
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect High
Do Not Use
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 1.03 3/2005
6/33
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.