CORPORATION
G3314
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/04
REVISED DATE :
BV
DSS
R
DS(ON)
I
D
-30V
240m
-1.9A
The G3314 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Description
Features
*Low On-resistance
*Ultrahigh-speed switching
*4V drive
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
3
Continuous Drain Current
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Operating Junction and Storage Temperature Range
Ratings
-30
f 20
-1.9
-1.5
-10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient
Max.
Unit
/W
1/4