ISSUED DATE :2005/03/04
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-30
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
V/к
V
-
-0.1
-
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-10V, ID=-1.7A
VGS= ̈́20V
-1.0
-
2
-
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
IGSS
-
-1
VDS=-30V, VGS=0
VDS=-30V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-10
-
240
VGS=-10V, ID=-1.7A
-
270
VGS=-10V, ID=-0.8A
VGS=-4.5V, ID=-1.3A
VGS=-4V, ID=-0.4A
Static Drain-Source On-Resistance2
mӨ
RDS(ON)
-
460
-
500
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
6.2
1.4
0.3
7.6
8.2
17.5
9
-
-
-
-
-
-
-
-
-
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=-1.7A
VDS=-15V
VGS=-10V
nC
VDS=-15V
ID=-1A
ns VGS=-10V
RG=6Ө
Turn-off Delay Time
Fall Time
Td(off)
Tf
RD=15Ө
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
230
130.4
40
Ciss
Coss
Crss
VGS=0V
pF
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.2
Unit
V
Test Conditions
-
-
-
-
VSD
IS=-1.25A, VGS=0V
Continuous Source Current (Body Diode
)
-
-
-1
A
IS
VD= VG=0V, VS=-1.2V
1
Pulsed Source Current (Body Diode
)
-6.4
A
ISM
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/W when mounted on min. copper pad.
G3314
Page: 2/4
GTM [ GTM CORPORATION ]
