CORPORATION
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
Unless otherwise specified)
Min.
-12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.01
-
12
-
-
-
-
-
-
15
1.3
4
8
11
54
36
985
180
160
Max.
-
-
-1.0
-
D
100
-1
-25
50
85
125
24
-
-
-
-
-
-
1580
-
-
pF
ns
nC
mŁ
Unit
V
V/ :
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-5.0V, I
D
=-4.0A
V
GS
= D
8V
V
DS
=-16V, V
GS
=0
V
DS
=-12V, V
GS
=0
V
GS
=-4.5V, I
D
=-4.3A
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, I
D
=-2.0A
I
D
=-4.0A
V
DS
=-12V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
V
GS
=-10V
R
G
=3.3 Ł
R
D
=10 Ł
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/ Tj
V
GS(th)
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Source-Drain Diode
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
V
SD
T
rr
Q
rr
-
-
-
-
39
26
-1.2
-
-
V
ns
nC
I
S
=-1.2A, V
GS
=0
I
S
=-4.0A, V
GS
=0
dI/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270 : /W when mounted on min. copper pad.
Characteristics Curve
2/4
GTM [ GTM CORPORATION ]
