CCD area image sensor S8844-0909
ꢀ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Fw × Sv
300,000
600,000
2.2
Max.
-
-
-
Unit
V
e-
Saturation output voltage
Vsat
-
Vertical
Horizontal
150,000
300,000
1.8
Full well capacity
Fw
Sv
CCD node sensitivity
-
µV/e-
Dark current *5
(MPP mode)
Readout noise *6
25 °C
0 °C
-
4,000
12,000
DS
e-/pixel/s
-
200
8
75,000
37,500
3
600
16
-
-
10
-
Nr
-
e- rms
Line binning
Area scanning
Photo response non-uniformity *8
Spectral response range
18,750
9,375
-
-
Dynamic range *7
DR
PRNU
-
-
%
nm
λ
200 to 1100
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: Operating frequency is 150 kHz.
*7: Dynamic Range (DR) = Full well/Readout noise
*8: Measured at half of the full well capacity.
Fixedpatternnoise(peak to peak)
Photo Response Non-Uniformity (PRNU) [%] =
Signal
× 100
ꢀꢀSpectral response (without window) *9
ꢀꢀSpectral transmittance characteristic of window material
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
90
80
70
60
50
40
100
90
80
BACK-THINNED
70
AR COATED SAPPHIRE
60
50
40
30
20
10
30
FRONT-SIDED
(UV COAT)
20
FRONT-SIDED
10
0
0
200
400
600
800
1000
1200
100 200 300 400 500 600 700 800 900 1000 1100 1200
WAVELENGTH (nm)
WAVELENGTH (nm)
KMPDB0058EA
KMPDB0226EA
*9: Spectral response with sapphire window is decreased by
the transmittance
3
HAMAMATSU [ HAMAMATSU CORPORATION ]
