CCD area image sensor
s
Specifications of built-in TE-cooler
S8844-0909
Parameter
Symbol
Condition
Typ.
Unit
Internal resistance
Rint Ta=25
°C
2.1
Ω
13
14
15
Maximum current *
Imax Tc * =Th * =25
°C
2.0
A
14
15
Maximum voltage
Vmax Tc * =Th * =25
°C
4.2
V
16
Maximum heat absorption *
Qmax
4.5
W
Maximum temperature of heat radiating side
-
70
°C
*13: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the
Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and
maintain stable operation, the supply current should be less than 60 % of this maximum current.
*14: Temperature of the cooling side of thermoelectric cooler.
*15: Temperature of the heat radiating side of thermoelectric cooler.
*16: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
6
(Typ. Ta=25 ˚C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
5
20
30
VOLTAGE (V)
4
10
3
0
2
-10
1
-20
0
0
0.5
1.0
1.5
-30
2.0
CURRENT (A)
KMPDB0180EA
s
Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
R1 = R2 × expB (1 / T1 - 1 / T2)
R1: Resistance at absolute temperature T1 (K)
R2: Resistance at absolute temperature T2 (K)
B: B constant (K)
1 MΩ
(Typ. Ta=25 ˚C)
RESISTANCE
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
B (298K / 323K) = 3450 K
CCD TEMPERATURE (˚C)
100 kΩ
10 kΩ
220
240
260
280
300
TEMPERATURE (K)
KMPDB0111EA
8
HAMAMATSU [ HAMAMATSU CORPORATION ]
