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HMD8M64D8A-13 参数 Datasheet PDF下载

HMD8M64D8A-13图片预览
型号: HMD8M64D8A-13
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 8Mx64bit ) , DIMM , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte (8Mx64bit),DIMM, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 10 页 / 84 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS
5.4
latency=3
t
SHZ
CAS
-
latency=2
-
6
6
6
t
CH
t
CL
t
SS
t
SH
t
SLZ
2.5
2.5
1.5
0.8
1
3
3
2
1
1
3
3
2
1
1
HSD8M64D8A
3
3
2
1
1
6
ns
ns
ns
ns
ns
ns
3
3
3
3
3
2
7
ns
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to
the parameter.
SIMPLIFIED TRUTH TABLE
COMMAND
Register
Mode register set
Auto refresh
Refresh
Self
refres
h
Auto
disable
Auto
disable
Auto
disable
Auto
disable
Burst Stop
Precharg
e
Bank selection
All banks
Entry
Exit
Entry
Exit
H
H
H
L
H
L
H
H
X
H
L
X
X
L
H
L
H
L
L
H
L
X
H
L
H
L
L
L
X
V
X
X
H
X
V
X
X
H
X
H
X
H
H
H
X
V
X
X
H
X
V
L
L
X
V
X
X
H
X
V
X
X
X
X
X
X
X
V
X
X
X
7
V
X
L
H
X
precharge
precharge
H
X
L
H
L
L
X
V
H
X
X
precharge
Entry
Exit
CKE
n-1
H
H
L
H
CKE
n
X
H
L
H
X
/C
S
L
L
L
H
L
/R
A
S
L
L
H
X
L
/C
A
S
L
L
H
X
H
/W
E
L
H
H
X
H
D
Q
M
X
X
X
X
V
BA
0,1
A10/
AP
OP code
X
X
Row address
L
H
X
L
H
L
H
X
V
H
Column
Address
(A0 ~ A9)
Column
L
Address
(A0 ~ A9)
4,5
6
4
4,5
4
A11
A9~A0
NOTE
1,2
3
3
3
3
Bank active & row addr.
Read &
column
address
precharge
Write &
column
address
Clock suspend or
active power down
Precharge
down mode
DQM
power
No operation command
(V=Valid, X=Don't care, H=Logic high, L=Logic low)
URL : www.hbe.co.kr
REV.1.0(August.2002)
- 8
-
HANBit Electronics Co.,Ltd.