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HMF51232M4D-90 参数 Datasheet PDF下载

HMF51232M4D-90图片预览
型号: HMF51232M4D-90
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH- ROM模块2MByte ( 512K ×32位) [FLASH-ROM MODULE 2MByte (512K x 32-Bit)]
分类和应用: 闪存存储
文件页数/大小: 12 页 / 421 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
Input timing measurement reference levels
Output timing measurement reference levels
1.5
1.5
0.8
2.0
HMF51232M4D
V
V
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETE
TEST
R
SYMBOLS
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
CE
t
OE
t
DF
t
DF
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From
Addresses,
t
QH
/CE or /OE, Whichever Occurs
First
0
0
0
ns
0
18
0
/OE = V
IL
55
30
0
20
70
30
0
20
90
35
0
35
120
50
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
55
55
70
70
90
120
ns
90
120
ns
DESCRIPTION
SETUP
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
-55
-70
-90
-120
UNIT
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics co., Ltd.