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HMN1M8DN-85I 参数 Datasheet PDF下载

HMN1M8DN-85I图片预览
型号: HMN1M8DN-85I
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块8Mbit的( 1,024KX 8位) , 40PIN DIP, 5V [Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 9 页 / 169 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
- WRITE CYCLE NO.2 (/CE-Controlled)
*1,2,3,4,5
HMN1M8DN
Address
t
AS
/CE
t
WP
/WE
t
DW
D
IN
t
WZ
D
OUT
Data
NOTE:
t
AW
t
CW
t
WR2
t
DH2
Data-in
Undefined
High-Z
1. /CE or /WE must be high during address transition.
2. Because I/O may be active (/OE low) during this period, data input signals of opposite
polarity to the outputs must not be applied.
3. If /OE is high, the I/O pins remain in a state of high impedance.
4. Either t
WR1
or t
WR2
must be met.
5. Either t
DH1
or t
DH2
must be met.
-
POWER-DOWN/POWER-UP TIMING
V
CC
4.75
V
PFD
t
PF
V
PFD
4.25
V
SO
t
FS
t
WPT
t
DR
V
SO
t
PU
t
CER
/CE
PACKAGE DIMENSION
URL : www.hbe.co.kr
REV. 0.2 (August, 2002)
8
HANBit Electronics Co.,Ltd.