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HMN1M8D 参数 Datasheet PDF下载

HMN1M8D图片预览
型号: HMN1M8D
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块8Mbit的( 1,024KX 8位) , 36PIN DIP, 5V [Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 167 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
DC ELECTRICAL CHARACTERISTICS
(T
A
= T
OPR
, V
CCmin
£
V
CC
V
CCmax
)
PARAMETER
Input Leakage Current
Output Leakage Current
Output high voltage
Output low voltage
Standby supply current
Standby supply current
CONDITIONS
V
IN
=V
SS
to V
CC
/CE=V
IH
or /OE=V
IH
or /WE=V
IL
I
OH
=-1.0mA
I
OL
= 2.1mA
/CE=V
IH
/CE≥ V
CC
-0.2V,
0V≤ V
IN
0.2V,
or V
IN
V
CC
-0.2V
Min.cycle,duty=100%,
Operating supply current
Power-fail-detect voltage
Supply switch-over voltage
/CE=V
IL
, I
I/O
=0㎃ ,
A
19
<V
IL
or A
19
>V
IH
V
PFD
V
SO
4.30
-
4.37
3
I
CC
-
75
I
SB1
-
2.5
SYMBOL
I
LI
I
LO
V
OH
V
OL
I
SB
MIN
-
-
2.4
-
-
TYP.
-
-
-
-
5
HMN1M8D
MAX
±
2
±
2
-
0.4
6
200
UNIT
mA
mA
V
V
mA
180
4.50
-
V
V
CAPACITANCE
(T
A
=25℃ , f=1MHz, V
CC
=5.0V)
DESCRIPTION
Input Capacitance
Input/Output Capacitance
CONDITIONS
Input voltage = 0V
Output voltage = 0V
SYMBOL
C
IN
C
I/O
MAX
20
20
MIN
-
-
UNIT
pF
pF
CHARACTERISTICS
(Test Conditions)
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing
reference levels
Output load
(including scope and jig)
VALUE
0 to 3V
5 ns
1.5V
( unless otherwise specified)
See Figures 1and 2
Figure 1.
Output Load A
Figure 2.
Output Load B
1KΩ
100㎊
1KΩ
5㎊
D
OUT
1.9KΩ
+5V
D
OUT
+5V
1.9KΩ
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
4
HANBit Electronics Co.,Ltd