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HMS51232Z4L-20 参数 Datasheet PDF下载

HMS51232Z4L-20图片预览
型号: HMS51232Z4L-20
PDF下载: 下载PDF文件 查看货源
内容描述: SRAM模块2Mbyte ( 512K ×32位) ,低功耗, 72引脚SIMM 5V [SRAM MODULE 2Mbyte (512K x 32-Bit), LOW POWER, 72-Pin SIMM 5V]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 393 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
TIMING DIAGRAMS
HMS51232M4L
TIMING WAVEFORM OF READ CYCLE
( Address Controlled) ( /CE = /OE = V
IL
, /WE = V
IH
)
t
RC
Address
t
AA
t
OH
Data out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE
(/WE = V
IH
)
t
RC
Address
t
AA
/CE
t
LZ(4
)
/OE
t
OLZ
Data Out
High-Z
Data Valid
t
HZ(3,4)
t
CO
t
OHZ
t
OE
t
OH
Notes
(Read Cycle)
1. /WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(max.) is less than t
LZ
(min.) both for a given device and from device
to device.
6
HANBit Electronics Co.,Ltd.